IRF520NLPBF
MOSFET N-CH 100V 9.7A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF520NLPBF is an N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 9.7A at 25°C (Tc). This through-hole component, packaged in a TO-262-3 Long Leads configuration, offers a maximum on-resistance (Rds On) of 200mOhm at 5.7A and 10V Vgs. Featuring a gate charge of 25nC (max) at 10V, the IRF520NLPBF is suitable for applications in industrial power supplies, motor control, and automotive systems. The device operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 48W at 25°C (Tc).
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 5.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 25 V |
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