IRF520NL
MOSFET N-CH 100V 9.7A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF520NL is an N-Channel power MOSFET featuring a 100V drain-source breakdown voltage and a continuous drain current capability of 9.7A at 25°C case temperature. This device offers a low on-resistance of 200mOhm maximum at 5.7A and 10V Vgs, with a 10V gate drive voltage. The IRF520NL exhibits a maximum gate charge of 25 nC at 10V and an input capacitance (Ciss) of 330 pF maximum at 25V. It is packaged in a TO-262-3 Long Leads (I2PAK, TO-262AA) through-hole configuration, supporting a maximum junction temperature of 175°C. Power dissipation is rated at 48W (Tc) and 3.8W (Ta). Suitable for applications in industrial and consumer electronics.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 5.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 25 V |
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