IRF520N
MOSFET N-CH 100V 9.7A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF520N is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 9.7A at 25°C. The On-Resistance (Rds On) is specified at a maximum of 200mOhm at 5.7A and 10V gate drive. With a gate charge (Qg) of 25 nC maximum at 10V and input capacitance (Ciss) of 330 pF maximum at 25V, it offers efficient switching performance. The device is packaged in a TO-220AB through-hole package, allowing for effective thermal management with a maximum power dissipation of 48W at case temperature. Operating temperatures range from -55°C to 175°C. This MOSFET is widely utilized in power supply units, motor control, and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 5.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 25 V |