IRF4905STRR
MOSFET P-CH 55V 74A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF4905STRR is a P-channel Power MOSFET designed for high-current switching applications. This component features a 55V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 74A at 25°C (Tc). The IRF4905STRR offers a low on-resistance (Rds On) of 20mOhm maximum at 38A and 10V gate-source voltage (Vgs). With a gate charge (Qg) of 180 nC maximum at 10V and input capacitance (Ciss) of 3400 pF maximum at 25V, it facilitates efficient switching. The device supports a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA. Power dissipation is rated at 3.8W (Ta) and 200W (Tc). Packaged in a TO-263-3, D2PAK (TO-263AB) for surface mounting, this MOSFET is suitable for applications in automotive, industrial power control, and high-power DC-DC converters. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 74A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 38A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3400 pF @ 25 V |
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