IRF450
MOSFET N-CH 500V 12A TO204AAManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF450 is an N-Channel Power MOSFET designed for high-voltage switching applications. This component features a Drain-to-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 12 A at 25°C. The device offers a low on-resistance (Rds On) of 500 mOhm maximum at 12 A and 10 V Vgs. With a maximum power dissipation of 150 W at case temperature, the IRF450 is suitable for power supply, motor control, and industrial automation systems. Key parameters include a Gate Charge (Qg) of 120 nC at 10 V and Input Capacitance (Ciss) of 2700 pF at 25 V. This device is packaged in a TO-204AA (TO-3) through-hole configuration.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-204AA (TO-3) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 25 V |
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