IRF4104SPBF
MOSFET N-CH 40V 75A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF4104SPBF is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 40V and a continuous Drain Current (Id) of 75A at 25°C (Tc). The Rds On is a maximum of 5.5mOhm at 75A and 10V gate drive. With a total gate charge (Qg) of 100 nC at 10V and an input capacitance (Ciss) of 3000 pF at 25V, it offers excellent switching performance. The device is rated for a maximum power dissipation of 140W (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ). Packaged in a surface-mount D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB) configuration, the IRF4104SPBF is suitable for industrial, automotive, and power supply applications where robust performance and thermal management are critical.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V |
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