IRF4104GPBF
MOSFET N CH 40V 75A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF4104GPBF, is designed for high-efficiency power switching applications. This device features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 75A at 25°C (Tc). The low on-resistance (Rds On) of 5.5mOhm at 75A and 10V gate-source voltage, coupled with a maximum power dissipation of 140W (Tc), ensures robust performance. The IRF4104GPBF utilizes advanced HEXFET® technology for optimized switching characteristics, with a gate charge (Qg) of 100nC at 10V and input capacitance (Ciss) of 3000pF at 25V. Housed in a standard TO-220AB package for through-hole mounting, this MOSFET operates across a temperature range of -55°C to 175°C. It is widely employed in automotive, industrial power control, and power supply units.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V |
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