IRF4104
MOSFET N-CH 40V 75A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF4104 is an N-Channel Power MOSFET in a TO-220AB package. This component offers a 40V drain-source breakdown voltage and a continuous drain current capability of 75A at 25°C (Tc). The low on-resistance is specified at a maximum of 5.5mOhm at 75A and 10V Vgs. Featuring a gate charge (Qg) of 100 nC at 10V and input capacitance (Ciss) of 3000 pF at 25V, the IRF4104 is suitable for applications requiring efficient switching. Its maximum power dissipation is 140W (Tc), and it operates within a temperature range of -55°C to 175°C (TJ). This through-hole mounted device is commonly utilized in power supply units, automotive electronics, and industrial motor control.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V |
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