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IRF40SC240ARMA1

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IRF40SC240ARMA1

MOSFET N-CH 40V 360A TO263-7

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Infineon Technologies StrongIRFET™ IRF40SC240ARMA1 is a high-performance N-Channel MOSFET designed for demanding power applications. Featuring a 40V drain-source voltage and a continuous drain current capability of 360A at 25°C (Tc), this component excels in power conversion and management. Its low Rds(on) of 0.65mOhm at 100A and 10V gate drive ensures efficient operation with minimal power loss. The device offers a maximum gate charge of 458 nC at 10V and an input capacitance of 18000 pF at 20V. Packaged in a PG-TO263-7 (D2PAK) surface mount configuration, it supports a maximum power dissipation of 417W (Tc). This MOSFET is suitable for use in industrial automation, electric vehicle power trains, and high-power switching applications. It operates across a wide temperature range from -55°C to 175°C (TJ).

Additional Information

Series: StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C360A (Tc)
Rds On (Max) @ Id, Vgs0.65mOhm @ 100A, 10V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 417W (Tc)
Vgs(th) (Max) @ Id3.7V @ 250µA
Supplier Device PackagePG-TO263-7
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs458 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds18000 pF @ 20 V

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