IRF40H210
MOSFET N-CH 40V 100A 8PQFNManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' HEXFET®, StrongIRFET™ IRF40H210 is a 40 V N-Channel MOSFET in an 8-PQFN (5x6) package. This surface mount component offers a continuous drain current of 100 A at 25°C with a maximum power dissipation of 125 W at the same temperature. Key specifications include a low on-resistance of 1.7 mOhm at 100 A and 10 V, and a gate charge (Qg) of 152 nC at 10 V. The input capacitance (Ciss) is 5406 pF at 25 V. Operating temperature ranges from -55°C to 150°C. This device is suitable for applications in automotive, industrial power control, and high-power switching.
Additional Information
Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 150µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 152 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5406 pF @ 25 V |
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