IRF3808LPBF
MOSFET N-CH 75V 106A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3808LPBF is an N-Channel Power MOSFET featuring a 75V drain-source voltage rating and a continuous drain current capability of 106A at 25°C (Tc). This device offers a low on-resistance (Rds On) of 7mOhm maximum at 82A and 10V Vgs, with a gate charge (Qg) of 220 nC maximum at 10V. The MOSFET is packaged in a TO-262-3 Long Leads (I2PAK, TO-262AA) through-hole configuration, supporting a maximum power dissipation of 200W (Tc). It operates across a wide temperature range of -55°C to 175°C (TJ). Applications for this component include industrial power supplies, automotive systems, and motor control.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 106A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 82A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5310 pF @ 25 V |
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