IRF3805STRL-7PP
MOSFET N-CH 55V 160A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3805STRL-7PP is an N-Channel Power MOSFET featuring a 55V drain-source voltage and 160A continuous drain current at 25°C. This device offers a low on-resistance of 2.6mOhm maximum at 140A and 10V Vgs, coupled with a maximum power dissipation of 300W at 25°C. The MOSFET is packaged in a D2PAK (7-Lead) surface mount configuration, suitable for high-power applications. Key parameters include a gate charge of 200 nC at 10V and input capacitance of 7820 pF at 25V. Operating temperature ranges from -55°C to 175°C. This component is utilized in industries such as automotive and industrial power control.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 140A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK (7-Lead) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7820 pF @ 25 V |
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