IRF3805SPBF
MOSFET N-CH 55V 75A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3805SPBF is a 55V N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a low on-resistance of 3.3mOhm at 75A and 10V Vgs, ensuring minimal conduction losses. With a continuous drain current capability of 75A (Tc) and a maximum power dissipation of 300W (Tc), it is suitable for demanding power management tasks. The D2PAK (TO-263-3) surface mount package offers robust thermal performance. Key electrical parameters include a gate charge (Qg) of 290 nC at 10V and input capacitance (Ciss) of 7960 pF at 25V. This MOSFET is utilized in industrial automation, automotive power systems, and power supply designs. The operating temperature range is -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 290 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7960 pF @ 25 V |
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