IRF3805LPBF
MOSFET N-CH 55V 75A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF3805LPBF, features a 55V drain-source breakdown voltage and a continuous drain current capability of 75A at 25°C. This device boasts a low on-resistance of 3.3mOhm maximum at 75A and 10V gate-source voltage, facilitating efficient power switching. The IRF3805LPBF is constructed with advanced MOSFET technology, providing a maximum power dissipation of 300W. Its TO-262-3 Long Leads package (also known as I2PAK or TO-262AA) allows for through-hole mounting. Key electrical characteristics include a gate charge of 290 nC at 10V and input capacitance of 7960 pF at 25V. This component is suitable for demanding applications in power supply design, automotive electronics, and industrial motor control.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 290 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7960 pF @ 25 V |
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