IRF3717TRPBF-1
MOSFET N-CH 20V 20A 8-SOICManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3717TRPBF-1 is an N-Channel Power MOSFET designed for demanding applications. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 20A at 25°C. The low on-resistance (Rds On) of 4.4mOhm at 20A and 10V gate-source voltage (Vgs) ensures efficient power transfer. Key parameters include a maximum gate charge (Qg) of 33 nC at 4.5V Vgs and an input capacitance (Ciss) of 2890 pF at 10V Vds. It operates across a wide temperature range of -55°C to 150°C (TJ). The surface mount 8-SOIC package facilitates integration into compact designs. This MOSFET is suitable for power management, automotive, and industrial control systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2890 pF @ 10 V |
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