IRF3717TR
MOSFET N-CH 20V 20A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF3717TR is an N-Channel Power MOSFET designed for efficient switching applications. This component features a 20V Drain-to-Source voltage (Vdss) and a continuous drain current (Id) of 20A at 25°C. The Rds(On) is maximized at 4.4mOhm when conducting 20A with a 10V Vgs. The device exhibits a low gate charge (Qg) of 33 nC at 4.5V Vgs and an input capacitance (Ciss) of 2890 pF at 10V Vds. With a maximum power dissipation of 2.5W (Ta), this MOSFET is suitable for surface mounting in an 8-SOIC package. Its operating temperature range is -55°C to 150°C (TJ). This component finds application in power management, automotive, and industrial systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2890 pF @ 10 V |
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