IRF3717PBF
MOSFET N-CH 20V 20A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF3717PBF is a 20V N-Channel power MOSFET designed for high-current switching applications. This device offers a continuous drain current of 20A (Ta) with a low on-resistance of 4.4mOhm at 20A and 10V Vgs. The MOSFET features a gate charge of 33 nC at 4.5V Vgs and an input capacitance of 2890 pF at 10V Vds. With a maximum power dissipation of 2.5W (Ta) and an operating temperature range of -55°C to 150°C (TJ), it is suitable for demanding environments. The 8-SOIC package allows for efficient surface mounting. This component finds application in power supplies, motor control, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2890 pF @ 10 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
