IRF3717
MOSFET N-CH 20V 20A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3717 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 20V Drain-Source Voltage (Vdss) and a continuous drain current rating of 20A at 25°C ambient temperature. The IRF3717 exhibits a low on-resistance of 4.4mOhm maximum at 20A and 10V Vgs, ensuring minimal conduction losses. Key parameters include a Gate Charge (Qg) of 33 nC maximum at 4.5V Vgs and an input capacitance (Ciss) of 2890 pF maximum at 10V Vds. It operates with gate drive voltages between 4.5V and 10V, with a maximum gate-source voltage of ±20V. The device is packaged in an 8-SOIC (0.154", 3.90mm Width) for surface mounting and has a maximum power dissipation of 2.5W at 25°C ambient. Operating temperature range is -55°C to 150°C (TJ). This component is suitable for use in automotive, industrial, and power supply sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2890 pF @ 10 V |
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