IRF3711ZS
MOSFET N-CH 20V 92A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF3711ZS is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a maximum drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 92A at 25°C (Tc). With a low on-resistance (Rds On) of 6mOhm at 15A and 10V, it minimizes conduction losses. The gate charge (Qg) is 24 nC at 4.5V, and input capacitance (Ciss) is 2150 pF at 10V, facilitating fast switching speeds. The device offers a maximum power dissipation of 79W (Tc) and operates within a temperature range of -55°C to 175°C (TJ). Packaged in a TO-263-3, D2PAK (2 Leads + Tab) surface mount configuration, the IRF3711ZS is suitable for demanding applications in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 92A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 10 V |
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