IRF3711ZPBF
MOSFET N-CH 20V 92A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, Part Number IRF3711ZPBF. This through-hole component features a 20V Drain-to-Source (Vdss) voltage and 92A continuous drain current (Id) at 25°C. The device offers a low on-resistance (Rds On) of 6mOhm maximum at 15A, 10V, and a gate charge (Qg) of 24nC maximum at 4.5V. With a maximum power dissipation of 79W (Tc) and an operating temperature range of -55°C to 175°C, it is suitable for demanding applications. The TO-220AB packaged MOSFET is utilized in automotive, industrial motor control, and power supply applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 92A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 10 V |
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