IRF3711ZCSTRR
MOSFET N-CH 20V 92A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3711ZCSTRR is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 92A at 25°C (Tc). The low on-resistance of 6mOhm at 15A and 10V gate drive, combined with a maximum gate charge of 24nC at 4.5V, ensures excellent conduction and switching performance. With a maximum power dissipation of 79W (Tc), it is suitable for demanding environments. The part is supplied in a TO-263-3, D2PAK surface mount package, ideal for automated assembly. This MOSFET is commonly utilized in power supply units, motor control, and automotive electronics. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 92A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 10 V |
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