IRF3711ZCSTRL
MOSFET N-CH 20V 92A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF3711ZCSTRL is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a low on-resistance of 6mOhm at 15A and 10V Vgs, enabling minimal conduction losses. With a drain-source voltage (Vdss) rating of 20V and a continuous drain current (Id) of 92A at 25°C, it is suitable for power management in automotive and industrial systems. The device utilizes a D2PAK (TO-263-3) surface-mount package, facilitating efficient thermal dissipation with a maximum power dissipation of 79W. Key electrical parameters include a gate charge (Qg) of 24 nC at 4.5V Vgs and input capacitance (Ciss) of 2150 pF at 10V Vds. Operating across a temperature range of -55°C to 175°C, the IRF3711ZCSTRL is supplied on tape and reel.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 92A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 10 V |
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