IRF3711Z
MOSFET N-CH 20V 92A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3711Z is a 20V N-Channel Power MOSFET designed for high-efficiency switching applications. This through-hole component, housed in a TO-220AB package, offers a continuous drain current capability of 92A at 25°C (Tc) with a maximum power dissipation of 79W (Tc). Key electrical characteristics include a low on-resistance (Rds On) of 6mOhm at 15A and 10V (Vgs), and a gate charge (Qg) of 24 nC at 4.5V (Vgs). The device features a drain-to-source voltage (Vdss) of 20V and can be driven with gate-source voltages ranging from 4.5V to 10V. Operating temperature spans from -55°C to 175°C (TJ). This MOSFET is utilized in various industries including automotive, industrial power control, and consumer electronics.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 92A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 10 V |
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