IRF3711STRRPBF
MOSFET N-CH 20V 110A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF3711STRRPBF. This D2PAK surface-mount device offers a 20V drain-source breakdown voltage and a continuous drain current capability of 110A at 25°C (Tc). Featuring a low on-resistance of 6mOhm maximum at 15A and 10V Vgs, this MOSFET is designed for efficient power switching. Key parameters include a gate charge of 44 nC maximum at 4.5V Vgs and an input capacitance (Ciss) of 2980 pF maximum at 10V Vds. The device supports a gate-source voltage range of ±20V and operates efficiently across a temperature range of -55°C to 150°C (TJ). Its high power dissipation capability, rated at 120W (Tc), makes it suitable for demanding applications in industries such as automotive, industrial automation, and power supplies. The component is supplied in a Tape & Reel (TR) package.
Additional Information
Series: HEXFET®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 120W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2980 pF @ 10 V |
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