IRF3711STRLPBF
MOSFET N-CH 20V 110A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF3711STRLPBF, offers a 20V drain-source breakdown voltage and a continuous drain current of 110A at 25°C (Tc). This surface mount device features a low on-resistance of 6mOhm maximum at 15A and 10V Vgs. The gate charge is specified at 44 nC maximum at 4.5V Vgs, with input capacitance (Ciss) of 2980 pF maximum at 10V Vds. Designed for high current applications, it supports gate drive voltages from 4.5V to 10V and has a ±20V Vgs maximum rating. The component is packaged in a TO-263-3, D2PAK (TO-263AB) and supplied on tape and reel. Its robust thermal performance allows for 120W power dissipation at 25°C (Tc), suitable for demanding applications in automotive, industrial power, and power supply sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 120W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2980 pF @ 10 V |
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