IRF3711S
MOSFET N-CH 20V 110A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3711S is an N-channel Power MOSFET designed for high-efficiency switching applications. This device features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 110A at 25°C (Tc). The low on-resistance (Rds On) of 6mOhm at 15A and 10V gate-source voltage ensures minimal conduction losses. With a gate charge (Qg) of 44 nC at 4.5V and input capacitance (Ciss) of 2980 pF at 10V, it facilitates fast switching speeds. The maximum power dissipation is rated at 120W (Tc) and 3.1W (Ta). Exhibiting a threshold voltage (Vgs(th)) of 3V at 250µA and a maximum gate-source voltage (Vgs) of ±20V, this MOSFET is suitable for power management, automotive systems, and industrial automation. It is supplied in a surface mount D2PAK package (TO-263-3, D2PAK) for efficient thermal management.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 120W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2980 pF @ 10 V |
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