IRF3711PBF
MOSFET N-CH 20V 110A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3711PBF is an N-Channel Power MOSFET designed for high-current switching applications. This component features a 20 V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 110 A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 6 mOhm maximum at 15 A and 10 V gate-source voltage. With a gate charge (Qg) of 44 nC maximum at 4.5 V, it offers efficient switching performance. The IRF3711PBF is housed in a TO-220AB through-hole package, suitable for thermal management with a maximum power dissipation of 120 W (Tc). This MOSFET is utilized in demanding applications across automotive and industrial power control sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 120W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2980 pF @ 10 V |
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