IRF3711LPBF
MOSFET N-CH 20V 110A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF3711LPBF is an N-channel power MOSFET designed for high-efficiency switching applications. This component features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 110A at 25°C (Tc). The IRF3711LPBF offers a low on-resistance (Rds On) of 6mOhm at 15A and 10V Vgs, minimizing conduction losses. Gate drive requirements range from 4.5V to 10V. Key parameters include a gate charge (Qg) of 44 nC at 4.5V and an input capacitance (Ciss) of 2980 pF at 10V. With a maximum power dissipation of 120W (Tc), this MOSFET is suitable for demanding applications in automotive, industrial, and power supply sectors. It is housed in a TO-262 package with long leads for through-hole mounting and operates across a temperature range of -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 120W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2980 pF @ 10 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
