IRF3711
MOSFET N-CH 20V 110A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3711 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain current (Id) rating of 110A at 25°C. The IRF3711 exhibits a low on-resistance of 6mOhm at 15A and 10V, with a gate threshold voltage (Vgs(th)) of 3V at 250µA. Key parameters include an input capacitance (Ciss) of 2980pF at 10V and a gate charge (Qg) of 44nC at 4.5V. With a maximum power dissipation of 120W at 25°C (Tc) and a Tj of 150°C, this MOSFET is housed in a TO-220AB package suitable for through-hole mounting. Its robust construction and performance characteristics make it suitable for use in automotive, industrial, and power supply applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 120W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2980 pF @ 10 V |
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