IRF3710ZSTRRPBF
MOSFET N-CH 100V 59A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3710ZSTRRPBF is a high-performance N-Channel power MOSFET designed for demanding applications. This device features a 100V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 59A at 25°C (Tc). The Rds(on) is specified at a maximum of 18mOhm at 35A and 10V gate-source voltage. With a maximum power dissipation of 160W (Tc), it is suitable for power supply designs, motor control, and industrial automation. The component utilizes advanced MOSFET technology, offering low on-resistance and efficient switching characteristics. It is supplied in a TO-263-3 D2PAK surface mount package on tape and reel, with an operating temperature range of -55°C to 175°C (TJ). Key parameters include a gate charge (Qg) of 120nC at 10V and input capacitance (Ciss) of 2900pF at 25V.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 59A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 25 V |
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