IRF3710ZSTRLPBF
MOSFET N-CH 100V 59A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3710ZSTRLPBF is a 100V N-Channel Power MOSFET designed for high-efficiency switching applications. This surface mount component, housed in a TO-263-3, D2PAK package, offers a continuous drain current of 59A (Tc) and a maximum power dissipation of 160W (Tc). Key parameters include a low on-resistance of 18mOhm at 35A and 10V, and a gate charge of 120 nC at 10V. The device features an input capacitance (Ciss) of 2900 pF at 25V and a threshold voltage (Vgs(th)) of 4V at 250µA. Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for use in industrial power supplies, automotive systems, and motor control circuits. It is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 59A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 25 V |
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