IRF3710SPBF
MOSFET N-CH 100V 57A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3710SPBF is a high-performance N-Channel power MOSFET designed for demanding applications. This device features a 100V drain-source voltage rating and a continuous drain current capability of 57A at 25°C (Tc), with a maximum power dissipation of 200W (Tc). The low on-resistance of 23mOhm at 28A and 10V gate-source voltage, coupled with a gate charge of 130 nC (max) at 10V, ensures efficient switching performance. The IRF3710SPBF operates with a drive voltage up to 10V and has a maximum gate-source voltage tolerance of ±20V. Its input capacitance (Ciss) is rated at 3130 pF (max) at 25V. This component is housed in a TO-263-3, D2PAK surface mount package, suitable for high-volume manufacturing. It is commonly utilized in power supply and motor control applications across various industries.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3130 pF @ 25 V |
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