IRF3710L
MOSFET N-CH 100V 57A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF3710L, is designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 57A at 25°C (Tc). The Rds(on) is specified at a maximum of 23mOhm at 28A and 10V gate drive. With a maximum power dissipation of 200W (Tc), it offers robust thermal performance. Key parameters include a Gate Charge (Qg) of 130 nC at 10V and an Input Capacitance (Ciss) of 3130 pF at 25V. The device operates within a temperature range of -55°C to 175°C (TJ). Packaged in a through-hole TO-262 form factor, the IRF3710L is suitable for use in industrial power supplies, automotive electronics, and motor control systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 57A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3130 pF @ 25 V |
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