IRF3709ZSTRRPBF
MOSFET N-CH 30V 87A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3709ZSTRRPBF is an N-channel power MOSFET designed for high-efficiency switching applications. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 87A at 25°C (Tc). With a low on-resistance (Rds On) of 6.3mOhm at 21A and 10V Vgs, it minimizes conduction losses. The MOSFET offers a gate charge (Qg) of 26 nC at 4.5V Vgs and an input capacitance (Ciss) of 2130 pF at 15V Vds. Its maximum power dissipation is 79W (Tc). The IRF3709ZSTRRPBF is housed in a TO-263-3 D2PAK surface-mount package, suitable for automated assembly. Operating temperature range is from -55°C to 175°C. This component is commonly utilized in automotive, industrial power supplies, and server applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 87A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2130 pF @ 15 V |
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