IRF3709ZSTRLPBF
MOSFET N-CH 30V 87A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3709ZSTRLPBF is an N-Channel Power MOSFET designed for demanding applications. This surface-mount device in a TO-263-3, D2PAK package features a low on-resistance of 6.3mOhm at 21A and 10V Vgs, minimizing conduction losses. With a drain-source voltage (Vdss) of 30V and continuous drain current capability of 87A at 25°C (Tc), it offers robust performance. The device exhibits a maximum power dissipation of 79W (Tc) and a gate charge of 26nC at 4.5V, facilitating efficient switching. Its operating temperature range of -55°C to 175°C makes it suitable for automotive, industrial power control, and high-current switching applications. The D2PAK package is provided on tape and reel.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 87A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2130 pF @ 15 V |
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