IRF3709ZSPBF
MOSFET N-CH 30V 87A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® MOSFET, part number IRF3709ZSPBF, is an N-Channel power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 87A at 25°C with a maximum Power Dissipation of 79W (Tc). The Rds(On) is specified at a low 6.3mOhm at 21A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 26 nC at 4.5V and an Input Capacitance (Ciss) of 2130 pF at 15V. The device supports gate drive voltages from 4.5V to 10V and has a maximum Vgs of ±20V. Operating temperature range is -55°C to 175°C (TJ). Packaged in a TO-263-3, D2PAK (2 Leads + Tab) surface-mount package, this MOSFET is suitable for automotive, industrial power supplies, and high-current DC-to-DC converters.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 87A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2130 pF @ 15 V |
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