IRF3709ZCSTRL
MOSFET N-CH 30V 87A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3709ZCSTRL is an N-Channel power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous drain current (Id) of 87A at 25°C, with a maximum power dissipation of 79W. The low on-resistance (Rds On) of 6.3mOhm at 21A and 10V gate drive, coupled with a gate charge (Qg) of 26 nC at 4.5V, ensures excellent switching performance.
The IRF3709ZCSTRL utilizes a TO-263-3, D2PAK surface mount package, suitable for automated assembly processes. Its operating temperature range spans from -55°C to 175°C. This MOSFET is commonly employed in industrial power supplies, automotive electronics, and telecom infrastructure where robust power handling and efficient switching are critical requirements. The device supports gate drive voltages from 4.5V to 10V, with a maximum Vgs of ±20V.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 87A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2130 pF @ 15 V |
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