IRF3709ZCL
MOSFET N-CH 30V 87A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3709ZCL is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a low on-resistance of 6.3 mOhm at 21A and 10V Vgs, with a continuous drain current capability of 87A at 25°C case temperature. The 30V drain-to-source voltage rating, coupled with a maximum power dissipation of 79W, makes it suitable for demanding power conversion circuits. Key parameters include a gate charge (Qg) of 26 nC at 4.5V Vgs and an input capacitance (Ciss) of 2130 pF at 15V Vds. The IRF3709ZCL utilizes MOSFET technology and is supplied in a TO-262-3 Long Leads package for through-hole mounting. It operates across a wide temperature range of -55°C to 175°C. This component is commonly found in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 87A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2130 pF @ 15 V |
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