IRF3709STRLPBF
MOSFET N-CH 30V 90A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3709STRLPBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 90A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of just 9mOhm at 15A and 10V Vgs, minimizing conduction losses. With a gate charge (Qg) of 41 nC max at 5V and input capacitance (Ciss) of 2672 pF max at 16V, it supports efficient switching frequencies. Available in a surface mount D2PAK package (TO-263-3, D2PAK), it offers excellent thermal performance with a maximum power dissipation of 120W (Tc). The operating temperature range is -55°C to 150°C. This MOSFET is suitable for use in automotive, industrial power control, and power supply applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 120W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2672 pF @ 16 V |