IRF3709STRL
MOSFET N-CH 30V 90A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3709STRL is an N-Channel Power MOSFET designed for high-current switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current capability of 90A at 25°C (Tc). The low on-resistance (Rds(on)) of 9mOhm at 15A and 10V gate-source voltage ensures efficient power transfer with minimal conduction losses. The device is housed in a surface-mount D2PAK (TO-263-3) package, facilitating integration into compact PCB designs. Key parameters include a gate charge (Qg) of 41 nC at 5V and input capacitance (Ciss) of 2672 pF at 16V. Maximum power dissipation is rated at 120W (Tc) and 3.1W (Ta). This MOSFET is suitable for use in power supply designs, motor control, and automotive applications. It operates across a wide temperature range of -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 120W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2672 pF @ 16 V |
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