IRF3709SPBF
MOSFET N-CH 30V 90A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3709SPBF is an N-Channel Power MOSFET with a Drain-to-Source Voltage (Vdss) of 30V. This device offers a continuous drain current (Id) of 90A at 25°C (Tc) and a low on-resistance (Rds On) of 9mOhm at 15A and 10V. Key parameters include a gate charge (Qg) of 41 nC at 5V and input capacitance (Ciss) of 2672 pF at 16V. The maximum power dissipation is 120W (Tc) and 3.1W (Ta). It features a gate threshold voltage (Vgs(th)) of 3V at 250µA and a maximum gate-source voltage (Vgs) of ±20V. The IRF3709SPBF is housed in a TO-263-3, D2PAK (2 Leads + Tab) package for surface mounting and operates across a temperature range of -55°C to 150°C. This component is widely utilized in power supply, automotive, and industrial applications requiring efficient switching.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 120W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2672 pF @ 16 V |
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