IRF3709PBF
MOSFET N-CH 30V 90A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3709PBF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source voltage rating and a continuous drain current capability of 90A at 25°C case temperature. The low on-resistance of 9mOhm at 15A and 10V Vgs, combined with a gate charge of 41 nC at 5V Vgs, ensures minimal conduction and switching losses. With a maximum power dissipation of 120W at 25°C case temperature and 3.1W at 25°C ambient temperature, it is suitable for demanding power management tasks. The TO-220AB through-hole package facilitates robust thermal management. This MOSFET is commonly utilized in industrial power supplies, automotive electronics, and renewable energy systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 120W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2672 pF @ 16 V |