IRF3709L
MOSFET N-CH 30V 90A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, IRF3709L, offers a 30V drain-source voltage and a continuous drain current of 90A at 25°C (Tc). This component features a low on-resistance of 9mOhm maximum at 15A and 10V, with a gate threshold voltage of 3V at 250µA. The device boasts a high continuous drain current capability of 90A (Tc) and a maximum power dissipation of 120W (Tc). Gate charge (Qg) is 41nC at 5V, and input capacitance (Ciss) is 2672pF at 16V. The IRF3709L utilizes a TO-262-3 Long Leads, I2PAK, TO-262AA package for through-hole mounting. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for applications in power management and high-current switching systems within the automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 120W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2672 pF @ 16 V |
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