IRF3708SPBF
MOSFET N-CH 30V 62A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF3708SPBF, offers a 30V drain-source voltage and a continuous drain current of 62A at 25°C (Tc). This surface mount device, packaged in a D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB), features a low on-resistance of 12mOhm maximum at 15A and 10V. With a maximum power dissipation of 87W (Tc) and a gate charge of 24nC at 4.5V, it is suitable for applications requiring efficient power switching. Operating temperature range is -55°C to 175°C (TJ). This component finds application in high-current switching, power supply, and motor control circuits.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 62A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 87W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2417 pF @ 15 V |
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