IRF3708S
MOSFET N-CH 30V 62A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF3708S is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a low Rds(on) of 12mOhm at 15A and 10V Vgs, enabling reduced conduction losses. With a continuous drain current capability of 62A at 25°C and a maximum power dissipation of 87W, it is suitable for demanding power management tasks. The drain-to-source voltage rating is 30V, and the gate-source voltage tolerance is ±12V. Key parameters include a gate charge of 24 nC at 4.5V and an input capacitance of 2417 pF at 15V. The IRF3708S is packaged in a TO-263-3 (D2PAK) surface-mount package, facilitating integration into compact designs. This component finds utility in industrial power supplies, motor control, and automotive applications where robust power switching is essential.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 62A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 87W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2417 pF @ 15 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
