IRF3708PBF
MOSFET N-CH 30V 62A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies IRF3708PBF is a HEXFET® N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 62A at 25°C. The low on-resistance is specified at 12mOhm maximum at 15A and 10V Vgs. The device offers a gate charge (Qg) of 24 nC maximum at 4.5V, with a typical input capacitance (Ciss) of 2417 pF at 15V. With a maximum power dissipation of 87W (Tc), it is suitable for high-power switching and linear applications. The TO-220AB package facilitates through-hole mounting. This MOSFET is commonly utilized in automotive, industrial, and power supply sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 62A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 87W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2417 pF @ 15 V |
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