IRF3708
MOSFET N-CH 30V 62A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3708 is an N-Channel Power MOSFET designed for high-performance switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 62A at 25°C (Tc). The ultra-low on-resistance (Rds On) is specified at 12mOhm maximum at 15A and 10V Vgs. Gate charge (Qg) is 24 nC maximum at 4.5V Vgs, with input capacitance (Ciss) at 2417 pF maximum at 15V Vds.
The IRF3708 is housed in a TO-220AB package, suitable for through-hole mounting. It offers a maximum power dissipation of 87W (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ). This device is commonly employed in automotive, industrial, and power supply applications requiring efficient power management. Drive voltage ranges from 2.8V to 10V.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 62A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 87W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2417 pF @ 15 V |
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