IRF3707ZSTRLPBF
MOSFET N-CH 30V 59A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRF3707ZSTRLPBF is a N-Channel Power MOSFET from the HEXFET®, StrongIRFET™ series. This component features a 30V drain-source voltage and a continuous drain current capability of 59A at 25°C (Tc). The Rds(on) is specified at a maximum of 9.5mOhm when driven at 21A and 10V Vgs. With a gate charge (Qg) of 15 nC at 4.5V Vgs and input capacitance (Ciss) of 1210 pF at 15V Vds, it offers efficient switching characteristics. The device is packaged in a TO-263-3, D2PAK surface mount configuration, suitable for demanding applications. Maximum power dissipation is rated at 57W (Tc). This MOSFET is utilized in industries such as automotive and industrial power control. It operates within a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 59A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 25µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1210 pF @ 15 V |
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