IRF3707ZSTRL
MOSFET N-CH 30V 59A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF3707ZSTRL, offers a 30V drain-source voltage rating and a continuous drain current capability of 59A at 25°C (Tc). This device features a low on-resistance of 9.5 mOhm maximum at 21A and 10V Vgs, with a typical gate charge of 15 nC at 4.5V. The input capacitance (Ciss) is rated at 1210 pF maximum at 15V. Designed for efficient power switching, it has a maximum power dissipation of 57W (Tc) and is supplied in a TO-263-3, D2PAK surface mount package. The operating temperature range is -55°C to 175°C. This component is utilized in applications such as power supplies, motor control, and automotive electronics.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 59A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1210 pF @ 15 V |
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