IRF3707ZCSTRRP
MOSFET N-CH 30V 59A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF3707ZCSTRRP is an N-Channel Power MOSFET designed for demanding applications. This device offers a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 59A at 25°C (Tc). With a low on-resistance (Rds On) of 9.5mOhm maximum at 21A and 10V Vgs, it minimizes conduction losses. The IRF3707ZCSTRRP features a gate charge (Qg) of 15 nC maximum at 4.5V Vgs and an input capacitance (Ciss) of 1210 pF maximum at 15V Vds. Its robust construction and 57W maximum power dissipation (Tc) make it suitable for power supply, automotive, and industrial motor control applications. The component is supplied in a D2PAK (TO-263-3) surface mount package and is available on tape and reel. Operating temperature range is -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 59A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 25µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1210 pF @ 15 V |
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